1n4448ws-v document number 81387 rev. 1.1, 12-aug-10 vishay semiconductors www.vishay.com 1 20145 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal fast switching diode features ? these diodes are also available in other case styles including the do-35 case with the type designation 1n4448, the minimelf case with the type designation ll4448, and the sot-23 case with the type designation imbd4448-v ? silicon epitaxial planar diode ? fast switching diodes ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-323 weight: approx. 4.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes ar e kept at ambient temperature. part ordering code type marking remarks 1n4448ws-v 1n4448ws-v-gs18 or 1N4448WS-V-GS08 a3 tape and reel parameter test condition symbol value unit reverse voltage v r 75 v peak reverse voltage v rm 100 v average rectified current half wave rectification with resistive load f 50 hz i f(av) 150 1) ma surge forward current t < 1 s and t j = 25 c i fsm 350 ma power dissipation p tot 200 1) mw
www.vishay.com 2 document number 81387 rev. 1.1, 12-aug-10 1n4448ws-v vishay semiconductors for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature. electrical characteristics t amb = 25 c, unless otherwise specified rectification efficien cy measurement circuit parameter test condition symbol value unit thermal resistance junction to ambient air r thja 650 1) k/w junction temperature t j 150 c storage temperature t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit forward voltage i f = 5 ma v f 620 720 mv i f = 100 ma v f 1000 mv leakage current v r = 20 v i r 25 na v r = 75 v i r 5a v r = 20 v, t j = 150 c i r 50 a diode capacitance v f = v r = 0 v c d 4pf reverse recovery time i f = 10 ma, i r = 1 ma, v r = 6 v, r l = 100 t rr 4ns rectification efficiency f = 100 mhz, v rf = 2 v ? 0.45 17436 60 5 k 2 nf v o v rf = 2 v
1n4448ws-v document number 81387 rev. 1.1, 12-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics (t amb = 25 c, unless otherwise specified) figure 1. forward characteristics figure 2. dynamic forward resistance vs. forward current figure 3. admissible power dissi pation vs. ambient temperature 1 8 105 i f (ma) v f ( v ) t j = 100 c t j = 25 c 10 - 2 10 - 1 10 2 10 3 1 10 12 0 1743 8 f = 1 khz t j = 25 c i f (ma) r f ( ) 10 10 2 10 3 10 4 10 -2 10 -1 110 2 10 2 5 2 5 2 5 2 5 0 50 100 150 200 250 0 50 100 150 200 20324 t am b - am b ient temperat u re (c) p tot - po w er dissipation (m w ) figure 4. relative capacitance vs. reverse voltage figure 5. leakage current vs . junction temperature 17440 v r ( v ) 0.7 0. 8 0.9 1.0 1.1 f = 1 mhz t j = 25 c 2 0 8 6 410 c d ( v r ) c d (0 v ) 17441 t j (c) i r (na) 10 10 2 10 3 10 4 100 200 2 5 2 5 2 5 2 5 v r = 20 v 1 0
www.vishay.com 4 document number 81387 rev. 1.1, 12-aug-10 1n4448ws-v vishay semiconductors for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-323 figure 6. admissible repetitive peak forward current vs. pulse duration 17442 t p (s) i frm (a) 100 1 3 5 10 -5 10 -4 10 -3 10 10 -1 10 -2 25 2 5 25 25 25 25 2 4 10 3 5 2 4 1 3 5 2 4 0.1 i i frm t n = t p /t t = 1/f p t t p n = 0 0.1 0.2 0.5 foot print recommendation: rev. 5 - date: 23.sept.2009 17443 document no.:s8-v-3910.02-001 (4) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.10 (0.004) cathode bar 0.20 (0.008) 0.40 (0.016) 2.50 (0.098) 1.1 (0.043) 1.5 (0.059) 2.85 (0.112) 1.60 (0.063) 1.95 (0.077) 0.15 (0.006) 0.1 (0.004) max. 1.15 (0.045) 0.8 (0.031) created - date: 24.august.2004 0.40 (0.016) 0.25 (0.010) 0.2 (0.008) 0 to 8
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